Gallium Nitride GaN (Galium Nitride) powder
Gan Gallium Nitride This is a mechanically strong semiconductor compound that has high heat resistance and thermal conductivity. The band gap is 3.4 eV. It’s also crack resistant.
Gallium Nitride properties:
This material is ideal for the construction of satellite solar cells arrays due to its low sensitivity in ionizing radiation. Because the equipment is stable in radiation, it may be of benefit to military or spatial applications.
We love the Gallium nitride transistor These transistors can work at temperatures higher than those of the GaAs (arsenide) transistor and produce the ideal power amplifier for microwave frequencies. GAN provides THz-compatible features as well. GaN, due to its power density and restrictions on voltage breakdown, is also a candidate for 5G cell base stations.
Research and applications of GaN materials represent the hotspots and frontiers in global semiconductor research. The new material is a semiconductor material for developing semiconductor devices, optical electronics and semiconductor materials, such as SiC, Diamonds. This material has been called the first generation of GE. This material is versatile because of its strong atomic bond and wide direct bandgap. It also has high thermal conductivity (almost zero sour corrosion), high electrical stability, good chemical stability, as well as a broad range of applications in light electrons, high temperature high power devices, and high frequency microwave device application.
To receive the most current information, send us an inquiry gallium nitride price Please fill out the form below if you wish to Gallium Nitride powder available In bulk.
Gallium Nitride powder product performance:
This powder, GaN, has a large direct bandgap and strong atomic bond, excellent thermal conductivity and chemical stability (almost zero acid corrosion). There are many applications for it, including optoelectronics.
Technical Parameters of Gallium Nitride GaN (Galium Nitride GaN) powder
Chemical Composition of Gallium Nitride GaN (Galium Nitride GaN) powder
It is simple. Gallium Nitride GaN Powder produced?
Group III-V for gallium nitride Gan semiconductor This compound has high resistance to chemical corrosive environment. This compound has a strong bond between Ga, nitrogen and is therefore resistant to corrosion. Ballium Nitride is a high-bandgap semiconductor, with bandgap=3.4. It has a fibrous structure and can be used for making a corrosive ambient lighting emitting device. Gallium Nitride is made by reacting Ga2O 3 and NH3 at about 1000°C.
Ga 2 O 3 + 2 NH 3 – 2 GaN + 3H 2 O
A chemical gas phase is also capable of depositing an organometallic composition containing Ga or a nitrogen atom. The conductivity and Xray diffraction measurements confirm that there is no influence of corrosive chemicals and alkaline environment on the GaN phases.
Applicaciones Gallium Nitride GaN Powder :
GaN (Galium Nitride) has been used in light-emitting diodes (LEDs) for many years. Galium Nitride emits blue light. This is because it’s a binary semiconductor III/V with direct bandgap. Gallium Nitride semiconductor This is suitable for high-power transistors capable of operating at extremely high temperatures. This is useful for Blu-ray disc readability. It is used to make semiconductor power components and radio frequency parts. Future sensors will include gallium nitride.
1. GaN is a good choice for larger TV screens and smaller, full-color panels inside trains or buses. GaN-based, efficient LEDs provide another choice for blue or green LEDs.
2. In power semiconductor fields like photovoltaics or electric vehicles, gallium nitride has been used.
3. The 5G radiofrequency fields use gallium-nitride. Because of the higher radio frequency power required and the energy consumed in 5G, 5G will slowly replace silicon-based material with gallium nutride.
4. GaN can be used to fast charge mobile phones. Gallium nitride charger You can use Gan technology The characteristics of high power, low size, and high efficacy are what make it a key ingredient in the development of super fast charging technology.
Shipping and Packing of Gallium Nickel GaN powder
There are many options for packaging, which all depend on the quantity of gallium Nitride GaN powder.
Packing of gaN powder for gallium nitride You can vacuum pack 100g, 500g, 1kg/bag or 25kg/barrel. Or as you request.
Galium Nitride GaN powder shipment: Once payment has been received, items may be shipped by air or by sea.
Luoyang Tongrun Nano Technology Co. Ltd.
We can provide high-quality, low-cost gallium Nitride powder. Please contact us to send an inquiry. (brad@ihpa.net)
Gan Gallium Nitride This is a mechanically strong semiconductor compound that has high heat resistance and thermal conductivity. The band gap is 3.4 eV. It’s also crack resistant.
Gallium Nitride properties:
CAS 25617-97-9 | |
Purity | >=99.99% |
Number | 25617-97-4 |
Appearance | Yellow powder |
Xray Diffraction | Structure conforms |
Trane Metal Analysis | 200 ppm |
This material is ideal for the construction of satellite solar cells arrays due to its low sensitivity in ionizing radiation. Because the equipment is stable in radiation, it may be of benefit to military or spatial applications.
We love the Gallium nitride transistor These transistors can work at temperatures higher than those of the GaAs (arsenide) transistor and produce the ideal power amplifier for microwave frequencies. GAN provides THz-compatible features as well. GaN, due to its power density and restrictions on voltage breakdown, is also a candidate for 5G cell base stations.
Research and applications of GaN materials represent the hotspots and frontiers in global semiconductor research. The new material is a semiconductor material for developing semiconductor devices, optical electronics and semiconductor materials, such as SiC, Diamonds. This material has been called the first generation of GE. This material is versatile because of its strong atomic bond and wide direct bandgap. It also has high thermal conductivity (almost zero sour corrosion), high electrical stability, good chemical stability, as well as a broad range of applications in light electrons, high temperature high power devices, and high frequency microwave device application.
To receive the most current information, send us an inquiry gallium nitride price Please fill out the form below if you wish to Gallium Nitride powder available In bulk.
Gallium Nitride powder product performance:
This powder, GaN, has a large direct bandgap and strong atomic bond, excellent thermal conductivity and chemical stability (almost zero acid corrosion). There are many applications for it, including optoelectronics.
Technical Parameters of Gallium Nitride GaN (Galium Nitride GaN) powder
Product Name | MF | Purity | Particle size | Melting Point | Density | The color of the sky |
gallium nitride | GaN | 99.99% | 60 mesh | 1700 | 6.1g/mL,25/4 | light yellow |
Chemical Composition of Gallium Nitride GaN (Galium Nitride GaN) powder
GaN | Cu | Ni | Zn | Al | Na | Cr | Ca | |
99.99% | 0.0005% | 0.0003% | 0.0005% | 0.001% | 0.0005% | 0.0003% | 0.0005% | 0.005% |
It is simple. Gallium Nitride GaN Powder produced?
Group III-V for gallium nitride Gan semiconductor This compound has high resistance to chemical corrosive environment. This compound has a strong bond between Ga, nitrogen and is therefore resistant to corrosion. Ballium Nitride is a high-bandgap semiconductor, with bandgap=3.4. It has a fibrous structure and can be used for making a corrosive ambient lighting emitting device. Gallium Nitride is made by reacting Ga2O 3 and NH3 at about 1000°C.
Ga 2 O 3 + 2 NH 3 – 2 GaN + 3H 2 O
A chemical gas phase is also capable of depositing an organometallic composition containing Ga or a nitrogen atom. The conductivity and Xray diffraction measurements confirm that there is no influence of corrosive chemicals and alkaline environment on the GaN phases.
Applicaciones Gallium Nitride GaN Powder :
GaN (Galium Nitride) has been used in light-emitting diodes (LEDs) for many years. Galium Nitride emits blue light. This is because it’s a binary semiconductor III/V with direct bandgap. Gallium Nitride semiconductor This is suitable for high-power transistors capable of operating at extremely high temperatures. This is useful for Blu-ray disc readability. It is used to make semiconductor power components and radio frequency parts. Future sensors will include gallium nitride.
1. GaN is a good choice for larger TV screens and smaller, full-color panels inside trains or buses. GaN-based, efficient LEDs provide another choice for blue or green LEDs.
2. In power semiconductor fields like photovoltaics or electric vehicles, gallium nitride has been used.
3. The 5G radiofrequency fields use gallium-nitride. Because of the higher radio frequency power required and the energy consumed in 5G, 5G will slowly replace silicon-based material with gallium nutride.
4. GaN can be used to fast charge mobile phones. Gallium nitride charger You can use Gan technology The characteristics of high power, low size, and high efficacy are what make it a key ingredient in the development of super fast charging technology.
Shipping and Packing of Gallium Nickel GaN powder
There are many options for packaging, which all depend on the quantity of gallium Nitride GaN powder.
Packing of gaN powder for gallium nitride You can vacuum pack 100g, 500g, 1kg/bag or 25kg/barrel. Or as you request.
Galium Nitride GaN powder shipment: Once payment has been received, items may be shipped by air or by sea.
Luoyang Tongrun Nano Technology Co. Ltd.
We can provide high-quality, low-cost gallium Nitride powder. Please contact us to send an inquiry. (brad@ihpa.net)
Gallium Nitride Properties |
|
Other Titles | gallium nitride powder, GaN, GaN powder, gallium mononitride |
25617-97-4 | |
Compound Formula | GaN |
Molecular Weight | 83.73 |
Appearance | Powder in light yellow |
Melting Point | 1700 degC |
Boiling Point | N/A |
Density | 6.1 g/cm3 |
Solubility of H2O | N/A |
Exact | 82.9287 |
Monoisotopic | 82.9287 |
Safety & Health Information |
|
Signal word | Alert |
Hazard Statements | H317 |
Hazard Codes | N/A |
Risk Codes | N/A |
Safety statements | 22-24/25 |
RTECS # | LW9640000 |
Transport Information | N/A |
WGK Germany | 3 |
Inquiry us