As a member of two-dimensional nanomaterials, Boron nitride is a honeycomb layered material in which boron atoms and nitrogen atoms are hybridized by sp2. Due to the polar boron-nitrogen bond between the layers, BN has excellent high temperature resistance, excellent mechanical strength, large specific surface area, neutron absorption, etc., and BN and its composite materials are in new energy and catalysis. The field of electronic devices and other fields has shown great potential for application.
BN is an important non-oxidizing ceramic material consisting of equal amounts of boron and nitrogen with excellent physical and chemical properties. BN crystals have four structures: cubic boron nitride (c-BN), hexagonal boron nitride (h-BN), rhombohedral boron nitride (r-BN), and wurtzite boron nitride (w-BN). Various crystal structures of boron nitride.
Due to the high hardness of steel materials, a large amount of heat is generated during processing. Diamond tools are easily decomposed at high temperatures and easily react with transition metals, while c-BN materials have good thermal stability and are not easily generated with iron group metals or alloys. The reaction can be widely applied to precision processing and grinding of steel products. In addition to excellent wear resistance, c-BN is also excellent in heat resistance. It can also cut heat-resistant steel, iron alloy, hardened steel, etc. at a relatively high cutting temperature, and can cut high hardness chill rolls and seepage. Carbon quenching materials and Si-Al alloys that are very abrasive to tool wear. In fact, tools and abrasive tools made of sintered bodies of c-BN crystals (high-temperature and high-pressure synthesis) have been used in high-speed precision machining of various hard alloy materials.
C-BN is a wide bandgap (band gap 6.4 eV) semiconductor material with high thermal conductivity, high resistivity, high mobility, low dielectric constant, high breakdown electric field, and double doping. It has good stability. It is called the third generation semiconductor material after Si, Ge and GaAs together with diamond, SiC and GaN. Their common feature is wide band gap, suitable for making electrons used under extreme conditions. Device. c-BN is the third-generation semiconductor material with the best performance. It can be used not only to prepare electronic devices operating under extreme conditions such as high temperature, high frequency and high power, but also has broad application prospects in deep ultraviolet luminescence and detectors.